09.00 | Welcome - Didier Louis, Chairman |
SESSION 1 - Plasma Etching for CMOS |
09.20 | Efraín Altamirano-Sánchez, Vasile Paraschiv and Werner Boullart - Invited IMEC, Kapeldreef 75, 3001 Leuven, Belgium FEOL etch challenges, from planar Metal Gates towards FinFET devices |
10.00 | A. P. Milenina, R. Athimulama, M. Demanda, and B. Coenegrachtsb a IMEC, Kapeldreef 75, 3001 Heverlee, Belgium b Lam Research Corp., Kapeldreef 75, B-3001 Leuven, Belgium Fluorocarbon-based passivation in STI plasma etching |
10.20 | G. Kokkoris, V. Constantoudis and E. Gogolides Institute of Microelectronics NCSR Demokritos, Aghia Paraskevi, Attiki, Greece, 15310 3D modeling of Line Edge Roughness transfer from the resist to the underlying substrate: The effect of resist roughness |
10.40 | Coffee break |
11.20 | P. Bodarta, G. Cungea, C. Petit-Etiennea, M. Darnona, M. Haassa, S. Bannab, O.Jouberta and T.Lillb a CNRS-LTM, 17 rue des Martyrs, 38054 Grenoble Cedex, France b Applied Materials, 974E Arques Ave. Sunnyvale, CA, 95085, USA SiCl4/Cl2 plasmas: a new chemistry to etch high-k material selectively to Si-based alloys |
11.40 | J.-F. de Marneffea, R. Ljazoulib, L. Souriaua, L. Zhanga, C. Wilsona and M. R. Baklanova a IMEC v.z.w., Kapeldreef 75, Leuven, B-3001, Belgium b Polytech’Orleans, rue de Blois 12, Orleans cedex2, 45067, France Study of damage caused by non-reactive Ar plasma on an organic low-k material |
12.00 | Lunch break |
SESSION 2 - New Processes and New Materials |
13.20 | Marc Segers, Gilles Baujon, Julien Richard, Vincent Girault and Emmanuel Guidotti - Invited Nanoplas, Centre Scientifique d’Orsay - Bâtiment 503, Orsay, 91401, France High Density Radical Flux applications for MEMS, LEDs and 3D-IC |
14.00 | T. Chevolleaua, G. Cungea, X. Chevalierb,c, R. Tironb, M. Darnona, C. Navarrod and S. Magnetd a LTM-CNRS, CEA-Leti, 17 Rue des Martyrs, 38054 Grenoble cedex, France b CEA-Leti, MINATEC, 17 Rue des Martyrs, 38054 Grenoble, cedex 9, France c LCPO-UMR 5629 Université Bordeaux I-CNRS-Institut Polytechnique de Bordeaux, Bâtiment 8, Avenue des Facultés – 33405 Talence cedex - France d ARKEMA FRANCE, Route Nationale 117, BP34- 64170 Lacq, France Self assembly patterning using block copolymer for advanced CMOS technology |
14.20 | G. Mannaert, V. Paraschiv, B. De Jaeger, M. Van Hove, M. Demand, S. Decoutere and W. Boullart IMEC v.z.w., Kapeldreef 75, Leuven, B-3001, Belgium Development of (Al)GaN recess etch for E-mode POWER HEMTs |
14.40 | A. Taverniera, L. Favenneca, T. Chevolleaub and V. Jousseaumec a STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France b LTM-CNRS/UJF (CEA, Leti, MINATEC), 17 Rue des Martyrs, 38054 Grenoble Cedex 09, France c CEA-Leti, Minatec campus, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France Innovative gap-fill strategy for 28 nm shallow trench isolation using etch-back process |
SESSION 3 - Plasma Induced Damage |
15.00 | Francesca Iacopia,b, Sven Staussa, Kazuo Terashimaa and Mikhail R. Baklanovc – Invited a Dept.of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561, Japan b presently at the Queensland Micro and Nanotechnology Centre, Griffith University, 4111 Nathan, QLD, Australia, c Inter-university Microelectronics Center, IMEC, Kapeldreef 75, 3001 Leuven, Belgium Cryogenic approaches to low-damage patterning of porous low-k films |
15.40 | K. Eriguchi, Y. Nakakubo, A. Matsuda, Y. Takao and K. Ono Graduate School of Engineering, Kyoto University Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan Unifed Model-Prediction Framework for MOSFET Performance Degradation by Plasma-Induced Si Damage and its Application to Process Parameter Optimization |
16.00 | A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi and K. Ono Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto, 606-8501, Japan Optical Characterization of Plasma-Induced Si Damage by Ar and Cl2 Inductively Coupled Plasmas |
16.20 | A. M. Myersa, K. J. Singha, M. J. van Veenhuizena and C. K. Manb a Intel Corporation, 2501 NW 229th Ave, Hillsboro, OR 97124 b LAM Research Corporation, 4650 Cushing Parkway Fremont, CA 94538 Mechanistic Understanding of Line Undulation as a Function of Ash-induced Structural Changes in a Porous Carbon-doped-Oxide Dielectric |
POSTER SESSION |
16.40 | Poster session |
1. | M. S. B. Castroa and S. Barnolab a Centro Tecnologico do Exercito, Avenida das Americas 28705, Rio de Janeiro, 23020-470, Brazil b Laboratoire d’Electronique et de Technologies de l’Information, 17 rue des Martyrs, Grenoble, 38054, France Selective anisotropic plasma etching of Ge on Si |
2. | S. Yanovicha, M. Baklanovb, O. Gushchina, E. Gorneva and A. Danilaa a MERI JSC, 12/1 1st Zapadny Proezd, Zelenograd, Moscow, 124460, Russia b IMEC, Kapeldreef 75, Leuven, B-3001, Belgium Application of fully fluorinated cyclic saturated hydrocarbons for highly selective nanoscale silicon dioxide reactive ion etching |
3. | S. Yanovicha, M. Baklanovb, S. Orlova, O. Gushchina, N. Zaitseva, P. Ignatova and R. Yafarovc a MERI JSC, 12/1 1st Zapadny Proezd, Zelenograd, Moscow, 124460, Russia b IMEC, Kapeldreef 75, Leuven, B-3001, Belgium c RAS, Kotel'nikov Institute of Radio Engineering and Electronics, Saratov, Russia Maskless Fabrication of High Density Silicon Nano-Pin Structures With Carbon Nano Clusters Acting as Mask for Subsequent Microwave Silicon Etching. |
4. | A. Zeniou, A. Smyrnakis and E. Gogolides Institute of Microelectronics, NCSR “Demokritos”, Aghia Paraskevi 15310 High-aspect-ratio Si nanowire fabrication using Colloidal self- assembly and fluorine-based plasma etching |
5. | E. Danilkin, A. Polyakov, O. P. Gutshin, A. Chamov, V. Hanin, E. Smirnov and G. Y. Krasnikov MIKRON JSC, 12/1 Pervyi Zapadny Proezd, Zelenograd, 124460 Moscow, Russia Etching of deep trenches in Si for non-planar power MOSFETs using HBr/O2/SF6 plasma |
6. | D. Belhareta,b, P. F. Calmona,b, P. Dubreuila,b, J. Tassellia,b and H. Graniera,b a CNRS ; LAAS ; 7 avenue du colonel Roche, F-31077 Toulouse, France b Université de Toulouse ; UPS, INSA, INP, ISAE ; UT1, UTM, LAAS ; F-31077 Toulouse, France Plasma etching of multilevel silicon structures by deep reactive ion etching process |
7. | V. Lukichev, V. Kalnov, I. Amirov, E. Zhikharev, K. Rudenko and A. Orlikovsky Institute of Physics and Technology RAS, 36/1 Nakhimovskii av., Moscow, 117218, Russia Aperture effect as a tool for fabrication 3-D photonic crystals |
8. | G. Y. Krasnikova, A. S. Valeeva, V. A. Vasiljevb*, K. A. Vorotilovb, P. I. Kuznetsova, D. S. Sereginb and E. V. Danilkina a JSC MIKRON, 12/1 1-y Zapadny Proezd, Zelenograd, Moscow, 124460 Russia b MIREA, 78, Vernadsky Avenue, Moscow, 119454, Russia Formation conductors with porous ultra Low-K dielectric for multilevel metallization VLSI |
9. | K. S. Mina, C. K. Kima, J. K. Kima,b and G. Y. Yeoma a Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746, South Korea, b Process Technology Team, Semiconductor R&D Center Samsung Electronics Co., Ltd., South Korea A Low Plasma-Induced Damaged Neutral Beam Etching for Metal Gate in Sub-32nm Metal Gate/High-k Dielectric CMOSFETs |
10. | I. V. Schweigert and A. L. Aleksandrov Institute of Theoretical and Applied Mechanics SB RAS, 630090 Novosibirsk, Russia Effect of nanoparticles on rf discharge afterglow |
11. | N. Škoro and E. Gogolides Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Attiki 15310, Greece Characterization of Hydrogen-based Plasmas for Cleaning of Organic Contamination from EUV Optics |
12. | J. K. Kima,c, S. S. Jeonga, S. W. Nama, K. S. Minc, C. K. Kimc, B. S. Kimb and G. Y. Yeomc a Process Technology Team, Semiconductor R&D Center Samsung Electronics Co., Ltd., 445-701, South Korea b Department of Information and Communication Engineering , Sungkyunkwan University, Suwon, Gyeonggi-do, 440-746, South Korea c Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 440-746, South Korea A study on the etching characteristics of organic layer in oxygen plasma with carbonyl sulfide |
13. | M. F. Pistoni, S. Paolillo and I. Venegoni STMicroelectronics, Competence Centre – Technology R&D Agrate Brianza (MB) – Italy Contact Module Definition for 110 nm Technology Node on BCD Platforms |
14. | M. F. Pistoni, P. Bernardinello and S. Colombo STMicroelectronics, Competence Centre – Technology R&D Agrate Brianza (MB) – Italy Active Area Definition for 80 nm Embedded Devices with Phase Change Memory and Logic |
19.00 | End of day |